Multi-Gate Modulation Doped In0.7Ga0.3As Quantum Well FET for Ultra Low Power Digital Logic
نویسندگان
چکیده
Multi-gate modulation doped In0.7Ga0.3As quantum well FETs (MuQFETs) are simulated, fabricated and analyzed in detail. The devices operate in both classical and non-classical quantum regime. Due to its robust electrostatics, its excellent channel transport properties and its versatile classical and quantum mode operation capability, In0.7Ga0.3As MuQFET is promising device architecture for future ultra low power information processing applications.
منابع مشابه
Ultra Low Power Symmetric Pass Gate Adiabatic Logic with CNTFET for Secure IoT Applications
With the advent and development of the Internet of Things, new needs arose and more attention was paid to these needs. These needs include: low power consumption, low area consumption, low supply voltage, higher security and so on. Many solutions have been proposed to improve each one of these needs. In this paper, we try to reduce the power consumption and enhance the security by using SPGAL, ...
متن کاملUltra-Low Cost Full Adder Cell Using the nonlinear effect in Four-Input Quantum Dot Cellular Automata Majority Gate
In this article, a new approach for the efficient design of quantum-dot cellular automata (QCA) circuits is introduced. The main advantages of the proposed idea are the reduced number of QCA cells as well as increased speed, reduced power dissipation and improved cell area. In many cases, one needs to double the effect of a particular inter median signal. State-of-the-art designs utilize a kind...
متن کاملAdvanced High-K Gate Dielectric for High-Performance Short-Channel In0.7Ga0.3As Quantum Well Field Effect Transistors on Silicon Substrate for Low Power Logic Applications
This paper describes integration of an advanced composite high-K gate stack (4nm TaSiOx-2nm InP) in the In0.7Ga0.3As quantum-well field effect transistor (QWFET) on silicon substrate. The composite high-K gate stack enables both (i) thin electrical oxide thickness (tOXE) and low gate leakage (JG) and (ii) effective carrier confinement and high effective carrier velocity (Veff) in the QW channel...
متن کاملA Novel Design of a Multi-layer 2:4 Decoder using Quantum- Dot Cellular Automata
The quantum-dot cellular automata (QCA) is considered as an alternative tocomplementary metal oxide semiconductor (CMOS) technology based on physicalphenomena like Coulomb interaction to overcome the physical limitations of thistechnology. The decoder is one of the important components in digital circuits, whichcan be used in more comprehensive circuits such as full adde...
متن کاملInvestigation of scalability of In0.7Ga0.3As quantum well field effect transistor (QWFET) architecture for logic applications
Please cite this article in press as: Hwang E et a logic applications. Solid State Electron (2011), d In this paper, the scalability of In0.7Ga0.3As QWFET is investigated using two-dimensional numerical drift–diffusion simulation. Numerical drift–diffusion simulations were calibrated using experimental results on short-channel In0.7Ga0.3As QWFETs [7] to include the effects of velocity overshoot...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2011